Uniform turn-on design on multiple-finger MOSFET for ESD...

Details Uniform turn-on design on multiple-finger MOSFET for ESD... Uniform turn-on design on multiple-finger MOSFET for ESD...

2007-01-30

2007-01-30

Jackson, Stephen W. (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S111000

Reexamination Certificate

active

10345325

ABSTRACT:
An electrostatic discharge protection circuit. The electrostatic discharge (ESD) circuit utilizes inductors and resistors added to sources of multiple fingers of the NMOS transistor, which is triggered by some feedback circuit uniformly. When under an ESD zapping, a finger MOS transistor is trigger initially to snapback region owing to its layout or other causes, a voltage drop across the inductor or the resistor connected to the source of the finger MOS transistor is occurred and presented to gates of the other finger MOS transistors by the feedback circuit. Thus, the other finger MOS transistors are turned on.

REFERENCES:
patent: 5134321 (1992-07-01), Mehta
patent: 5670803 (1997-09-01), Beilstein et al.
patent: 5959488 (1999-09-01), Lin et al.
patent: 6445068 (2002-09-01), Sofue et al.
patent: 6462601 (2002-10-01), Chang et al.
patent: 6583972 (2003-06-01), Verhaege et al.

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