Uniform recess of a material in a trench independent of...

Details Uniform recess of a material in a trench independent of... Uniform recess of a material in a trench independent of...

2007-10-31

2010-11-16

Lebentritt, Michael S. (Department: 2829)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S699000, C438S430000, C257SE21651

Reexamination Certificate

active

07833872

ABSTRACT:
Columnar elements which extend to varying heights above a major surface of a substrate, e.g., polysilicon studs within trenches in the substrate, are recessed to a uniform depth below the major surface. The columnar elements are etched selectively with respect to a material exposed at the surface in an at least partly lateral direction so that the columnar elements are recessed to a uniform depth below the major surface at walls of the trenches.

REFERENCES:
patent: 5683945 (1997-11-01), Penner et al.
patent: 6004844 (1999-12-01), Alsmeier et al.
patent: 6194313 (2001-02-01), Singh et al.
patent: 6232233 (2001-05-01), Chaudhary
patent: 6396121 (2002-05-01), Bertin et al.
patent: 6426252 (2002-07-01), Radens et al.
patent: 6482716 (2002-11-01), Wohlfarht
patent: 6566177 (2003-05-01), Radens et al.
patent: 6699794 (2004-03-01), Flietner et al.
patent: 6953724 (2005-10-01), Edleman et al.

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