Uniform gas flow CVD apparatus

Coating apparatus – Gas or vapor deposition – Multizone chamber

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118725, C23C 1646

Patent

active

051880580

ABSTRACT:
A CVD apparatus comprising a reaction chamber in which reaction gas is supplied from above the substrate supported on the susceptor plate and exhausted uniformly from a plurality of circumferentially spaced gas exits, and infrared light heats the substrate from below the substrate via an infrared light transparent window arranged between the source of infrared light and the susceptor plate. A second infrared light transparent window with a central opening is arranged between the first infrared light transparent window and the susceptor plate. Nitrogen gas or an inert gas is supplied from a portion between the first and second infrared light transparent windows and flows through a plurality of circumferentially spaced gas passages arranged at the juncture of the susceptor plate and the peripheral wall of the reaction chamber to the gas exits. The gas passages are coordinated with the gas exits so that the flow of the reaction gas is less disturbed by the flow of the second gas.

REFERENCES:
patent: 4709655 (1987-12-01), Van Mastrigt
patent: 5094885 (1988-07-01), Selbrede

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