Uniform chemical etching method

Details Uniform chemical etching method Uniform chemical etching method

2008-07-08

2008-07-08

Goudreau, George A. (Department: 1792)

Etching a substrate: processes

Nongaseous phase etching of substrate

Projecting etchant against a moving substrate or controlling...

C216S099000, C438S748000, C438S752000, C438S753000

Reexamination Certificate

active

07396483

ABSTRACT:
The invention concerns a method of wet chemical etching of a wafer comprising at least one surface layer of silicon-germanium (SiGe) for etching by dispensing an etching solution deposited on a rotating wafer, the method being characterized in that it comprises a first etching step in which said etching solution is dispensed from a fixed position located at a predetermined distance from the center of the wafer, and a second etching step in which the etching solution is dispensed radially from the center of the wafer and over a maximum distance which is less than the radius of said wafer.

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