Unified contact plug process for static random access memory (SR

Details Unified contact plug process for static random access memory (SR Unified contact plug process for static random access memory (SR

1995-07-03

1996-08-13

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 47, 437 60, 437195, H01L 2170, H01L 2700

Patent

active

055455840

ABSTRACT:
A method was achieved for making a static random access memory SRAM by integrating or merging into the SRAM process a unified contact plug process that reduces the number of processing steps and forms low resistance ohmic contacts between N.sup.+ and P.sup.+ polysilicon layers. The plug process utilizes patterned features in the multi-layers of polysilicon and the high selective etching of silicon oxide to polysilicon to form all the contact concurrently, and thereby eliminate the need to etch contacts openings between each polysilicon layer. The unified contact plug method was demonstrate on the SRAM for making the a buried contacts for the node contacts on the SRAM, the bit line contacts and a V.sub.ss contact for the ground plane in the SRAM cell.

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patent: 5371104 (1994-12-01), Liou et al.
patent: 5374591 (1994-12-01), Hasegawa et al.
patent: 5460995 (1995-10-01), Kiyono et al.

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