Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2006-08-01
2006-08-01
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C363S020000, C361S111000, C361S119000
Reexamination Certificate
active
07084486
ABSTRACT:
A device for protecting I/O lines using PIN or NIP low capacitance transient voltage suppressors and steering diodes are disclosed. In an exemplary embodiment, a two (2) terminal device with a unidirectional low capacitance TVS diode (1101) and an anti-parallel LC PIN or NIP diode (1102) is disclosed. To provide for a low capacitance TVS with a forward conducting low-voltage characteristic, the LC PIN or NIP diode is placed anti-parallel to the unidirectional low capacitance TVS. This LC PIN or NIP diode must also have a reverse blocking voltage greater than the avalanche breakdown p-n junction voltage (V(BR)) of the unidirectional TVS.
REFERENCES:
patent: 6163328 (2000-12-01), Vannerson et al.
patent: 2004/0021178 (2004-02-01), Larson
patent: 2004/0070029 (2004-04-01), Robb et al.
Jackson Walker L.L.P.
Klinger Robert C.
Microsemi Corporation
Owens Douglas W.
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