Unframed via interconnection with dielectric etch stop

Details Unframed via interconnection with dielectric etch stop Unframed via interconnection with dielectric etch stop

1986-03-27

1988-08-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, 156656, 156667, H01L 21441

Patent

active

047677244

ABSTRACT:
A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondingly permits greater metallization line pitch, smaller circuit features, and more reliable interlayer electrical contact. A method for insulative metal oxide deposition is also described.

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