Underfill and encapsulation of carrier substrate-mounted...

Plastic and nonmetallic article shaping or treating: processes – Direct application of electrical or wave energy to work – Laser

Reexamination Certificate

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C264S496000, C264S267000, C264S272130, C264S272170

Reexamination Certificate

active

06537482

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to stereolithography and, more specifically, to the use of stereolithography in the manufacture of electronic components. More particularly, the invention pertains to a method for sealing and protecting an interface area between a semiconductor device and a carrier substrate to which it is attached and, optionally, encapsulation of at least part of the assembly.
2. State of the Art
Flip-chip style packaging for semiconductor dice is becoming ever more popular. In a flip-chip package, an array or pattern of external conductive elements such as solder bumps or conductive or conductor-filled epoxy pillars protrude from the active surface of the semiconductor die for use in mechanically and electrically connecting the semiconductor die to like-patterned ends of conductive traces of higher level packaging such as a carrier substrate.
There is typically a large mismatch in the coefficient of thermal expansion (CTE) between the material of the semiconductor die and that of the carrier substrate, such as a circuit board or interposer, bearing the conductive traces to which the external conductive elements of the die are bonded. Thus, significant lateral stresses between the semiconductor die and carrier substrate result from normal thermal cycling. Without a strong mechanical attachment of the semiconductor die to the substrate, the die might pop loose from the carrier substrate, or one or more of the external conductive elements might fracture or release from its corresponding conductive trace. In addition, the small spacing or pitch of the external conductive elements creates a significant potential for shorting between adjacent conductive elements or conductive elements and adjacent carrier substrate traces due to the presence of a dust particle or condensed moisture between the semiconductor die and the carrier substrate. Therefore, when a flip-chip type of electronic device such as a semiconductor die is conductively attached to a carrier substrate, underfilling the space between the device and substrate with an electrically insulative material is very desirable to enhance the mechanical bond between the die and the substrate and to mutually laterally dielectrically isolate adjacent electrical connections between the die and the
The continuing trend toward smaller semiconductor dice having smaller, more densely packed external conductive elements, and dice attached to substrates at an ever increased packing density, all exacerbate the problems already noted and further increase the desirability of using an insulating underfill.
As depicted in
FIG. 1
, an exemplary, conventional underfill structure
38
is formed between a flip-chip style semiconductor die
20
and a carrier substrate
10
. The semiconductor die
20
has an active surface
22
with a plurality of conductive pads
32
to which external conductive elements
30
are bonded or on which external conductive elements
30
are formed, all as known in the art. In this illustration, the external conductive elements
30
comprise an array of solder balls. The semiconductor die
20
is connected electrically to the carrier substrate
10
by facing the active surface
22
to the carrier substrate face
12
and reflow-bonding the external conductive elements
30
to conductive trace pads
14
on the carrier substrate face
12
.
Conventional polymeric materials used to form a dielectric underfill structure
38
are relatively viscous, many times the viscosity of water, and complete underfilling of the area between a semiconductor die
20
and a carrier substrate
10
is thus difficult to achieve. Often, these polymeric materials must be heated to an undesirably high temperature before they will flow in a satisfactory manner. The problem is especially acute where the device-substrate spacing is small. Thus, prior art methods use a vacuum source to attempt to draw the underfill material into the interstitial volume or spaces
34
surrounding the external conductive elements
30
, i.e., balls, bumps, columns, etc.
As shown in
FIG. 1
, adequate removal of air, water vapor and condensed moisture from the interstitial volume or spaces
34
, particularly the crevices
36
at connector interfaces with the active surface
22
and carrier substrate
10
, is not consistently achieved. Voids or bubble
26
of gas or condensed, liquid water may remain in the underfill structure
38
in the interstitial volume or spaces
34
and may conductively join external conductive elements
30
, plurality of conductive pads
32
and conductive trace pads
14
to provide a short circuit. Moreover, the material of the underfill structure
38
does not adhere to all of the surfaces of semiconductor die
20
and carrier substrate
10
in the interconnection area under the “footprint” of the die, thus lessening the mechanical bond strength therebetween. Furthermore, the so-called Fine Ball Grid Array (FBGA) now in use in the semiconductor industry, using very small-dimensioned balls and ball pitch as well as typically a reduced spacing between adjacent semiconductor dice on a carrier substrate and the disposition of dice on both sides of a carrier substrate, limits the use of vacuum apparatus to enhance the effective underfill between dice and the carrier substrate. As a result, the manufacture of such electronic assemblies results in high cost and a relatively high reject and rework rate, which is obviously very costly.
In the past decade, a manufacturing technique termed “stereolithography,” also known as “layered manufacturing,” has evolved to a degree where it is employed in many industries.
Essentially, stereolithography (STL) as conventionally practiced, involves utilizing a computer to generate a three-dimensional (3-D) mathematical simulation or model of an object to be fabricated, such generation can usually be effected with 3-D computer-aided design (CAD) software. The model or simulation is mathematically separated or “sliced” into a large number of relatively thin, parallel, usually vertically superimposed layers, each layer having defined boundaries and other features associated with the model (and thus the actual object to be fabricated) at the level of that layer within the exterior boundaries of the object. A complete assembly or stack of all of the layers defines the entire object, and surface resolution of the object is, in part, dependent upon the thickness of the layers.
The mathematical simulation or model is then employed to generate an actual object by building the object, layer by superimposed layer. A wide variety of approaches to stereolithography by different companies has resulted in techniques for fabrication of objects from both metallic and nonmetallic materials. Regardless of the material employed to fabricate an object, stereolithographic techniques usually involve disposition of a layer of unconsolidated or unfixed material corresponding to each layer within the object boundaries, followed by selective consolidation or fixation of the material to at least a semisolid state in those areas of a given layer corresponding to portions of the object, the consolidated or fixed material also at that time being substantially concurrently bonded to a lower layer. The unconsolidated material employed to build an object may be supplied in particulate or liquid form, and the material itself may be consolidated or fixed or a separate binder material may be employed to bond material particles to one another and to those of a previously formed layer. In some instances, thin sheets of material may be superimposed to build an object, each sheet being fixed to a next lower sheet and unwanted portions of each sheet removed, a stack of such sheets defining the completed object. When particulate materials are employed, resolution of object surfaces is highly dependent upon particle size, whereas when a liquid is employed, surface resolution is highly dependent upon the minimum surface area of the liquid which can be fixed and the minimum thickness of

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