Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-04-18
2006-04-18
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S767000, C257S778000, C257S779000
Reexamination Certificate
active
07030492
ABSTRACT:
An under bump metallurgic (UBM) layer which is adapted for a chip is disclosed. The UMM layer alleviate the loss of electromigration resulting from current crowing effect at the corner of UBM layer near the transmission line. By increasing the thickness of the UBM layer at the particular region which is close to the transmission line, losses of the UBM layer due to electromigration can be compensated. The life time of the chip is, therefore, enhanced.
REFERENCES:
patent: 6249044 (2001-06-01), Kao et al.
patent: 6452270 (2002-09-01), Huang
patent: 6462426 (2002-10-01), Kelkar et al.
Advanced Semiconductor Engineering Inc.
Jackson Jerome
Jiang Chyun IP Office
Nguyen Joseph
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