Under bump metallurgic layer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257S767000, C257S778000, C257S779000

Reexamination Certificate

active

07030492

ABSTRACT:
An under bump metallurgic (UBM) layer which is adapted for a chip is disclosed. The UMM layer alleviate the loss of electromigration resulting from current crowing effect at the corner of UBM layer near the transmission line. By increasing the thickness of the UBM layer at the particular region which is close to the transmission line, losses of the UBM layer due to electromigration can be compensated. The life time of the chip is, therefore, enhanced.

REFERENCES:
patent: 6249044 (2001-06-01), Kao et al.
patent: 6452270 (2002-09-01), Huang
patent: 6462426 (2002-10-01), Kelkar et al.

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