Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2006-06-20
2006-06-20
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257S780000, C257S781000, C257S782000, C257S783000
Reexamination Certificate
active
07064446
ABSTRACT:
Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.
REFERENCES:
patent: 5234153 (1993-08-01), Bacon et al.
patent: 6689680 (2004-02-01), Greer
patent: 6750133 (2004-06-01), Datta
patent: 2004/0164421 (2004-08-01), Tellkamp
patent: 2004/0253803 (2004-12-01), Tomono et al.
Barnak John P.
Chang Margherita
Fang Ming
Feldewerth Gerald B.
Huang Tzuen-Luh
LandOfFree
Under bump metallization layer to enable use of high tin... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Under bump metallization layer to enable use of high tin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Under bump metallization layer to enable use of high tin... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3631235