Uncooled amorphous YBaCuO thin film infrared detector

Details Uncooled amorphous YBaCuO thin film infrared detector Uncooled amorphous YBaCuO thin film infrared detector

1996-06-21

1998-10-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257 43, 257 53, 257613, H01L 31058, H01L 2904, H01L 31036, H01L 310376

Patent

active

058215980

ABSTRACT:
A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.

REFERENCES:
patent: 3881181 (1975-04-01), Khajezadeh
patent: 4544441 (1985-10-01), Hartmann et al.
patent: 5572060 (1996-11-01), Butler et al.

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