Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1988-03-25
1989-05-30
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330302, 330304, H03F 316, H03F 3191
Patent
active
048354856
ABSTRACT:
An unconditionally-stable, ultra-low-noise RF preamplifier, for an operating frequency within the range from about 15 MHz. to about 500 MHz., has a first stage in which a MESFET device is operated in the common-source configuration, with an active load providing an effective impedance to the first stage to cause the stability factor K for the entire preamplifier to exceed a value of 1.00 over the entire frequency range. A second stage, acting as at least a portion of the active load on the first state, containing a plurality of active devices coupled in parallel to provide a substantially constant input impedance over the frequency range.
REFERENCES:
patent: 4511813 (1985-04-01), Pan
patent: 4658220 (1987-04-01), Heston et al.
Riml, Peter "13-cm GaAsFET Preamp", QST, Aug. 1984, p. 65.
"VHF Preamplifiers", GH Krauss, Ham Radio, Dec. 1979, pp. 50-60.
"VHF and UHF Low Noise Preamplifiers", GH Krauss, QEX, Dec. 1981, pp. 3-6.
Davis Jr. James C.
General Electric Company
Krauss Geoffrey H.
Mottola Steven
Snyder Marvin
LandOfFree
Unconditionally-stable ultra low noise R.F. preamplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Unconditionally-stable ultra low noise R.F. preamplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Unconditionally-stable ultra low noise R.F. preamplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2155624