Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1979-10-02
1981-12-01
Smith, Alfred E.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 53, H03F 360
Patent
active
043038921
ABSTRACT:
Input and output electrodes of a microwave, active semiconductor amplifying element are shunted to ground by resistive means having values selected to assure unconditional stability of the semiconductor amplifying element. The resistive means and active element are located in a common semiconductor package having three output terminals respectively connected to input, output and common electrodes of the amplifying element. The resistive means includes, in certain embodiments, first and second resistors respectively shunting the input and common electrodes and output and common electrodes, with values respectively selected to provide relatively high efficiency and low noise characteristics for the amplifying element.
REFERENCES:
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Hejhill, R., "RF Small Signal Design Using Two-Port Parameters", Motorola Application, Note 215A, 1967.
Rollett, J. M., "Stability and Power-Gain Invariants of Linear Two Ports", IRE Trans. Ckt. Theory, vol. CT-9, Mar. 1962, pp. 29-32.
"S-Parameters . . . Circuit Analysis and Design", Hewlett Packard Application, Note 95, Sep. 1968.
Linvill et al., "The Design of Tetrode Transistor Amplifiers", BSTJ, vol. 35, Jul. 19 56, pp. 813-840.
"Using Linvill Techniques for RF Amplifiers", Motorola Application Note Number 166, 1967.
Stern, A. P., "Stability and Power Gain of Tuned Transistor Amplifiers", Proc. I.R.E., vol. 45, Mar. 1957, pp. 335-343.
Ghausi, M. S., Principles and Design of Linear Active Circuits, McGraw-Hill, pp. 467-473.
Weller Carroll E.
Woodruff Thomas J.
Cincinnati Electronics Corporation
Grigsby T. N.
Smith Alfred E.
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