Ultraviolet-transparent conductive film and process for...

Details Ultraviolet-transparent conductive film and process for... Ultraviolet-transparent conductive film and process for...

2005-05-24

2005-05-24

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S518000, C438S609000

Reexamination Certificate

active

06897560

ABSTRACT:
The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3crystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3crystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500° C. and an oxygen partial pressure of 0 to 1 Pa.

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