Ultraviolet transmitting oxide with metallic oxide phase and met

Optical: systems and elements – Optical modulator – Having particular chemical composition or structure

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427567, 427596, 438779, 257289, G02F 100, B05D 306, H01L 2131, H01L 2994

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active

060942959

ABSTRACT:
An electro-conductive ultraviolet light transmitting Ga.sub.2 O.sub.3 material (10) with a metallic oxide phase is deposited on a GaAs substrate or supporting structure (12). The Ga.sub.2 O.sub.3 material or thin layer comprises a minor component of metallic IrO.sub.2. The Ga.sub.2 O.sub.3 thin layer may be positioned using thermal evaporation (106) of Ga.sub.2 O.sub.3 or of a Ga.sub.2 O.sub.3 containing a compound from an Iridium crucible (108). Alternatively, the Ir may be co-evaporated (110) by electron beam evaporation. The electro-conductive ultraviolet light transmitting material Ga.sub.2 O.sub.3 with a metallic oxide phase is suitable for use on solar cells and in laser lithography.

REFERENCES:
patent: 5124762 (1992-06-01), Childs et al.
patent: 5451548 (1995-09-01), Hunt et al.
patent: 5550089 (1996-08-01), Dutta et al.
patent: 5597768 (1997-01-01), Passlack et al.
patent: 5622653 (1997-04-01), Orita et al.
patent: 5665658 (1997-09-01), Passlack
An article entitled "Thermodynamic and photochemical stability of low interface state density Ga.sub.2 O.sub.3 -GaAs structures fabricated by in situ molecular beam epitaxy" from Appl. Phys. Lett. 69(3), M. Passlack et al., pp. 302-304 (Jul. 15, 1996).
An article entitled "Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy" from Appl. Phys. Lett. 68(25), M. Passlack et al., pp. 3605-3607, (Jun. 17, 1996).
An article entitled "Quasistatic and high frequency capacitance-voltage characterization of Ga.sub.2 O.sub.3 -GaAs structures fabricated by in situ molecular beam epitaxy" from Appl. Phys. Lett. vol. 68, No. 8, M. Paasalck et al., pp. 1099-1101 (Feb. 19, 1996).
An article entitled "Anisotropy of electrical and optical properties in B-Ga.sub.2 O.sub.3 single crystals " from Appl. Phys. Lett. 71(7), N. Ueda et al., pp. 933-935 (Aug. 18, 1997).
An article entitled "Synthesis and control of conductivity of ultraviolet transmitting B-Ga.sub.2 O.sub.3 single crystals" from Appl. Phys. Lett. 70(26), N. Ueda, pp. 3561-3563 (Jun. 30, 1997).

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