Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-03-20
2007-03-20
Tran, Long (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S226000, C257S440000
Reexamination Certificate
active
11057603
ABSTRACT:
An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.
REFERENCES:
patent: 6080378 (2000-06-01), Yokota et al.
patent: 2005/0174052 (2005-08-01), Niigaki et al.
patent: 5-335613 (1992-06-01), None
patent: 11-248531 (1998-03-01), None
Hayashi Kazushi
Kawakami Nobuyuki
Tachibana Takeshi
Yokota Yoshihiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Kabushiki Kaisha Kobe Seiko Sho
Reed Smith LLP
Tran Long
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