Ultraviolet semiconductor laser and method of manufacturing the

Details Ultraviolet semiconductor laser and method of manufacturing the Ultraviolet semiconductor laser and method of manufacturing the

1991-07-24

1993-07-13

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

052280446

ABSTRACT:
A BN layer having a zinc blend type crystal structure and a BeCN.sub.2 layer having a chalcopyrite type crystal structure are stacked on a substrate via a BP buffer layer, thereby constituting a heterojunction. This heterojunction is used to form an ultraviolet semiconductor laser and other new semiconductor devices such as an LED.

REFERENCES:
patent: 4980730 (1990-12-01), Mishima et al.
J. L. Shay & J. H. Wernick, CH2, "The Chalcopyrite Structure and Crystal Growth", Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, pp. 1-15, Jan. 1975.
Japanese Journal of Applied Physics, vol. 29, No. 2, pp. 205-206, Feb. 1990, H. Amano, et al., "Stimulated Emission Near Ultraviolet at Room Temperature From a GaN Film Grown On Shapphire By MOVPE Using an AIN Buffer Layer".
Soviet Journal of Quantum Electronics, vol. 14, No. 3, pp. 420-422, Mar. 1984, V. I. Kozlovskii, et al., "Ultraviolet ZnS Semiconductor Laser Pumped Longitudinally by an Electron Beam".
Patent Abstracts of Japan, vol. 13, No. 463 (E-833), Oct. 19, 1989, & JP-A-1-179-471, Jul. 17, 1989, O. Mishima, et al., "P-N Junction Type Light Emitting Element of Cubic Boron Nitride" & U.S. Pat. No. 4,980,730.
JEE Journal of Electronic Engineering, vol. 25, No. 258, pp. 82-83, Jun. 1988, "Inorganic Material Research Institute Succeeds in Ultraviolet Ray Emission with c-BN Junction Diode".
Applied Physics Letters, vol. 53, No. 11, pp. 962-964, Sep. 12, 1988, O. Mishima, et al., "Ultraviolet Light-Emitting Diode of a Cubic Boron Nitride PN Junction Made at High Pressure".

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