Ultraviolet erasable nonvolatile semiconductor memory device

Details Ultraviolet erasable nonvolatile semiconductor memory device Ultraviolet erasable nonvolatile semiconductor memory device

1988-02-24

1989-07-11

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 54, 357 73, 365185, H01L 2978

Patent

active

048476676

ABSTRACT:
In a step of forming an interlayer insulation film between memory elements in an ultraviolet erasable nonvolatile semiconductor memory device and an upper metal wiring layer, a thermal oxide film is formed on a semiconductor substrate and around the stacked gate, and a boron and phosphorus doped oxide film is formed on a phosphorus doped oxide film which is formed on the thermal oxide film. Then, a heat treatment is effected to cause the boron and phosphorus doped oxide film to melt and fill the concave portion on the surface of the phosphorus doped oxide film.

REFERENCES:
patent: 4763177 (1988-08-01), Paterson

Affiliated with

Also associated with

Rating

Ultraviolet erasable nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultraviolet erasable nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultraviolet erasable nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-440320