Ultraviolet erasable nonvolatile memory with current mirror circ

Static information storage and retrieval – Floating gate – Particular biasing

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365190, 365207, 365208, 365210, G11C 1140

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active

051989972

ABSTRACT:
An ultraviolet erasable nonvolatile memory device comprising a plurality of memory cells which are erasable by ultraviolet rays employs a sense amplifier consisting a current mirror circuit. The current mirror circuit is connected to the memory cells and a reference cell respectively for readout. In one example, an effective control gate voltage of the reference cell is set to a lower value than that of the memory cells. The current drivability of the reference cell exhibits an intermediate value between that of erased memory cell and that of programmed memory cell. In another example, a constant current source is provided at a node between the memory cells and the current mirror circuit, so that a current on the reference cell side is subtracted by the constant current source.

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