Ultraviolet detector

Details Ultraviolet detector Ultraviolet detector

2006-04-14

2008-12-30

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S472000, C257S485000, C257SE31065

Reexamination Certificate

active

07470940

ABSTRACT:
An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top of the GaN epitaxial layer; and a plurality of ohmic contacts also formed on top of the GaN epitaxial layer, wherein, the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer together form a double buffer layer structure so as to improve the reliability and radiation hardness of the UV detector; and wherein the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer are formed by RF-plasma enhanced MBE growth technology.

REFERENCES:
patent: 5677538 (1997-10-01), Moustakas et al.
patent: 6137123 (2000-10-01), Yang et al.
patent: 6345063 (2002-02-01), Bour et al.
patent: 6690042 (2004-02-01), Khan et al.
patent: 7170111 (2007-01-01), Saxler
patent: 2004/0036086 (2004-02-01), Khan et al.
patent: 2007/0259510 (2007-11-01), Udagawa
patent: 2008/0135852 (2008-06-01), Udagawa

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