Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2010-10-29
2011-10-25
Tran, Long (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S351000, C257S431000, C257S432000, C257S443000, C257S461000
Reexamination Certificate
active
08044484
ABSTRACT:
The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
REFERENCES:
patent: 6852565 (2005-02-01), Zhao
patent: 2002/0153569 (2002-10-01), Katayama
patent: 07-162024 (1995-06-01), None
patent: 2002-314117 (2002-10-01), None
Aryan Afzalian et al., “Physical Modeling and Design of Thin-film SOI Lateral PIN Photodiodes,” IEEE Transactions on Electron Devices, vol. 52, No. 5, Jun. 2005 pp. 1116-1122.
Japanese Office Action dated Nov. 18, 2008 with English Translation.
Chiba Tadashi
Miura Noriyuki
Oki Semiconductor Co., Ltd.
Tran Long
Volentine & Whitt P.L.L.C.
LandOfFree
Ultraviolet detecting device and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultraviolet detecting device and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultraviolet detecting device and manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4274873