Ultralow dielectric constant layer with controlled biaxial...

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Reexamination Certificate

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C174S13800J, C257S632000, C257S646000, C257SE21277, C428S304400, C428S315700, C438S789000, C438S790000

Reexamination Certificate

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07357977

ABSTRACT:
A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa.

REFERENCES:
patent: 2005/0156285 (2005-07-01), Gates et al.
patent: 2005/0194619 (2005-09-01), Edelstein et al.
patent: 2006/0079099 (2006-04-01), Nguyen et al.

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