Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrate

Details Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrate Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrate

1997-06-06

1999-11-02

Everhart, Caridad

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Pedestal base

438405, H01L 2144

Patent

active

059769416

ABSTRACT:
The present invention presents a method in which semiconductor heterojunction and homojunction materials are selectively formed on silicon pedestals in an HMIC after the high temperature processing steps in fabricating the HMIC structure are completed.

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