Ultrahigh speed laser

Details Ultrahigh speed laser Ultrahigh speed laser

1996-05-30

1997-07-22

Scott, Jr., Leon

Coherent light generators

Particular temperature control

372 26, 372 6, 372 82, H01S 304

Patent

active

056510160

ABSTRACT:
An apparatus and method for obtaining ultra-high speed operation of a semiconductor laser diode is presented. The invention utilizes any of a variety of conventional laser diodes in combination with cooling means for operation of the laser at temperatures below 120 K. Input electrical signals may include signals on a 28 GHz signal carrier and pulsed signals. An extended fiber optics cable may be used to operate the system as an optical delay line.

REFERENCES:
patent: 4485474 (1984-11-01), Osterwalder
patent: 4910737 (1990-03-01), Payne et al.
patent: 5008890 (1991-04-01), McFarlane
patent: 5136600 (1992-08-01), Fidric et al.
"Direct modulation of semiconductor lasers at f>10 GHz by low temperature operation" K.Y. Lau, et al. (unpublished preprint, submitted to Appl. Phys. Lett. Sep. 1983).
"Temperature dependence of long wavelength semiconductor lasers," J. O'Gourman et al., Appl. Phys. Lett. 60, 1058-1060 (Mar. 1992).
"Temperature characteristics of (InAs).sub.1 /(GaAs).sub.4 short-period lattices quantum well laser," N.K. Dutta, et al., Appl. Phys. Lett. 62, 2018-2020 (Apr. 1993).
"Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)" L.E. Eng, et al., Appl. Phys. Lett. 58, 2752-2754 (Jun. 1991).
"25 GHz bandwidth 1.55 .mu.M GaInAsP p--Doped Strained Multiquantum-Well Lasers", P.A. Morton et al., Electronics Letters 28, 2456-2457 (Nov. 1992).
"High-speed InGaAs/GaAs strained multiple quantum well lasers with low damping," Nagarajan et al., Appl. Phys. Lett. 58, 2326-2328 (May 1991).

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