Ultrahigh density charge transfer device

Details Ultrahigh density charge transfer device Ultrahigh density charge transfer device

1994-10-13

1999-12-07

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257746, 257686, 257777, 359245, 359254, 359295, H01L 2348, G02F 100

Patent

active

059988746

ABSTRACT:
Metal heated to a molten state is injected under a high hydrostatic penetration pressure into extremely small and closely spaced channels of an insulating matrix to form an array of electrically conductive pins or wires. The materials for the pins and matrix are selected for compatibility with respect to melting, matrix sintering and surface tension penetration conditions associated with the fabrication of a high density charge transfer device.

REFERENCES:
patent: 4499655 (1985-02-01), Anthony
patent: 4946592 (1990-08-01), Galaj et al.
patent: 5087278 (1992-02-01), Suzuki
patent: 5287215 (1994-02-01), Warde et al.
Warde et al, Applied Optics vol. 31 No. 20 Jul. 10, 1992 pp. 3971-3979 "Cge--transfer--plate spatial light modulators".

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