Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon
Reexamination Certificate
2006-10-03
2006-10-03
Hendrickson, Stuart L. (Department: 1754)
Chemistry of inorganic compounds
Carbon or compound thereof
Elemental carbon
C264S346000
Reexamination Certificate
active
07115241
ABSTRACT:
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
REFERENCES:
patent: 6582513 (2003-06-01), Linares et al.
patent: 2003/0230232 (2003-12-01), Frushour et al.
patent: WO 01/96633 (2001-12-01), None
Diamond 2003—Oral Programme, 14 European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide.
Chih-shiue Yan et al., “Very high growth rate chemical vapor deposition of single-crystal diamond” Oct. 1, 2002, vol. 99 No. 20, pp. 12523-12525.
Jan Isberg et al., “High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond” Science, vol. 297, Issue 5587, 1670-1672, Sep. 6, 2002 [DOI: 10.1126/science.1074374].
Takahiro Imai et al., Systhesis of Large Free-Standing Diamond Single Crystals By Homoepitaxial Growth.
Patrick Doering et al., Large Area Single Crystal CVD Diamond: Properties and Applications.
Tetsuo Irifune et al., “Materials: Ultrahard Polycrystalline Diamond From Graphite”, Nature 421, 599-600 (Feb. 6, 2003); doi:10.1038/421599b.
Wuyi Wang, Featured Lab Note: Another Commercial U.S. Facility Offers HPHT Annealing, Summer 2002, Gems & Gemology, vol. 38, Issue 2, Jul. 29, 2004.
M. D. Drory et al. “Fracture of Synthetic Diamond”, Department of Materials Science and Engineering, (Received Mar. 10, 1995; accepted for publication May 11, 1995).
J.E. Shigley, et al., “Gemological Identification of HPHT-Annealed Diamonds”, Seventh Annual V.M. Goldschmidt Conference (2001).
Hemley Russell J.
Mao Ho-Kwang
Yan Chih-shiue
Carnegie Institution of Washington
Hendrickson Stuart L.
Morgan & Lewis & Bockius, LLP
Raetzsch Alvin T
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