Ultrahard diamonds and method of making thereof

Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon

Reexamination Certificate

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C264S346000

Reexamination Certificate

active

07115241

ABSTRACT:
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.

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