Ultrafine powder of silicon carbide, a method for the preparatio

Details Ultrafine powder of silicon carbide, a method for the preparatio Ultrafine powder of silicon carbide, a method for the preparatio

1983-12-12

1986-02-18

Lechert, Jr., Stephen J.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

75 05B, 75236, 75251, 264 56, 264332, 501 88, C01B 3136

Patent

active

045713316

ABSTRACT:
The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.

REFERENCES:
patent: 3836673 (1974-09-01), Weaver et al.
patent: 4127411 (1978-11-01), Yajima et al.
patent: 4383852 (1983-05-01), Yoshizawa
patent: 4484943 (1984-11-01), Miura et al.

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