Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Patent
1996-11-27
1999-08-10
Breneman, Bruce
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
216 51, 216 52, 216 66, 438945, 427533, 427534, 427537, 427552, 4272554, C23C 1600
Patent
active
059354542
ABSTRACT:
A method of fabricating nanometric structures on a substrate by dry etching includes setting the substrate at a temperature at which condensation of etching gas products of etching gas decomposed, recombined and reacted, or products of reactions between the etching gas and substrate material starts to occur, forming condensates at specific locations on the substrate. The condensates form an etching mask for the dry etching process.
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Kanayama Toshihiko
Tada Tetsuya
Agency of Industrial Science & Technology, Ministry of Internati
Alanko Anita
Breneman Bruce
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