Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1991-04-29
1992-11-10
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330308, 250214A, H03F 316
Patent
active
051627540
ABSTRACT:
An amplification device relating to the field of the amplification of ultra-wideband electrical signals from the dc to the microwave range, and more precisely from dc to microwaves of over 6 GHz, notably for the amplification of signals transmitted at very high bit rates on optic fibers, of the type including at least one ampification stage, the active amplification element of which is a field-effect transistor mounted as a common source, each of the amplification stages including means for the simultaneous maintaining of a positive dc voltage bias on the drain of the amplification transistor and a negative or zero dc bias on the gate of the transistor. This device may advantageously be made in monolithic integrated circuit form.
REFERENCES:
patent: 4011518 (1977-03-01), Irvine et al.
patent: 4612514 (1986-09-01), Shigaki et al.
patent: 4841253 (1989-06-01), Crabill
Y. Miyagawa et al., Electronics Letters, "7GHz Bandwidth Optical Front-End Circuit using GaAs FET Monolithic IC Technology", Sep. 14, 1989, vol. 25, pp. 1305-1307.
Follot Georges
Mottet Serge
Perennec Andre
Soares Robert
France Telecom (CNET)
Mullins James B.
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