Ultra-thin wire for semiconductor connections

Details Ultra-thin wire for semiconductor connections Ultra-thin wire for semiconductor connections

1981-06-17

1982-10-19

O'Keefe, Veronica

Stock material or miscellaneous articles

All metal or with adjacent metals

Foil or filament smaller than 6 mils

428620, 428652, 428923, 357 67, 29589, 29590, 29591, H10L 2348

Patent

active

043550827

ABSTRACT:
To prevent metal fatique, particularly when making a button loop, or nail head thermo compression bond connection to a semiconductor, the connecting wire has a core of copper, or a copper alloy of at least 60% copper content, and a jacket of aluminum, or aluminum alloy, of at least 95% aluminum content; in a preferred form, the core is 94% copper and 6% tin, and the jacket is, for example, 99% aluminum, 1% silicon; 96% aluminum, 4% copper; or 99% aluminum, 1% magnesium, all percentages by weight.

REFERENCES:
patent: 3306716 (1967-02-01), Adler
patent: 3716469 (1973-02-01), Bhatt et al.
patent: 3967013 (1976-06-01), Danis
patent: 4004892 (1976-01-01), Vlam
patent: 4024567 (1977-05-01), Iwata et al.
patent: 4151545 (1979-04-01), Schnepf et al.
A. Bischoff et al., Metallkundliche Aspekte bei Verabeitung und Einsatz von Feinstdrahten in der Halbleitertechnik, Draht 31, 1980, Seiten 128 bis 131.
H. Thiede et al., Characterizing Fine Wire for Thermocompression and Ultrasonic Bonding, Proceedings of the 1979 International Microelectronics Symposium.
A. Bischoff, Properties and Metallurgical Aspects of Wires Used for Bonding, Proceedings of the Technical Programme Internepcon U.K., 1980.
F. d'Heurle et al., Improving Resistance to Electromigration of Al.Cu Strips IBM Technical Disclosure Bull., 1979, vol. 13, No. 9, Feb. '71.

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