Ultra thin surface mount wafer sensor structures and methods for

Details Ultra thin surface mount wafer sensor structures and methods for Ultra thin surface mount wafer sensor structures and methods for

1998-03-12

1999-10-26

Gellner, Michael L.

Electrical resistors

Resistance value responsive to a condition

Fluid- or gas pressure-actuated

338 4, 338 36, H01C 1010

Patent

active

059735902

ABSTRACT:
A semiconductor sensor device including a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.

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