Ultra-thin semiconductor membranes

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148 33, 148900, 148DIG3, 148DIG5, 148DIG42, 148DIG56, 148DIG58, 148DIG64, 148DIG65, 148DIG83, 148DIG119, 148DIG135, 156628, 156662, 428333, 428337, 428409, 428410, 428446, 437225, 437247, 437966, 437974, H01L 21306, H01L 21465, H01L 4902

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049524461

ABSTRACT:
This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium arsenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.
The ion implantation changes the etching characteristics of the ion implanted layer. Thus, when the partially damaged semiconductor material is exposed to an etchant the etching rate in the damaged region is decreased by a factor of several thousand as compared to the undamaged semiconductor material.

REFERENCES:
patent: 2846346 (1958-08-01), Bradley
patent: 3534467 (1970-10-01), Sachs et al.
patent: 3647581 (1972-03-01), Mash
patent: 3749654 (1973-07-01), Mikulski
patent: 3902979 (1975-09-01), Thomas
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4092209 (1978-05-01), Ipri
patent: 4093503 (1978-06-01), Harris et al.
patent: 4108715 (1978-08-01), Ishikawa et al.
patent: 4172906 (1979-10-01), Pancholy
patent: 4177298 (1979-12-01), Shigeta et al.
patent: 4225408 (1980-09-01), Barlow et al.
patent: 4228452 (1980-10-01), Losee et al.
patent: 4230505 (1980-10-01), Wu et al.
patent: 4234361 (1980-11-01), Guckel
patent: 4255208 (1981-03-01), Deutscher et al.
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4262056 (1981-04-01), Hubler et al.
patent: 4267014 (1981-05-01), Davey et al.
patent: 4308078 (1981-12-01), Cook
patent: 4313773 (1982-02-01), Briska et al.
patent: 4338362 (1982-07-01), Turcotto
patent: 4341588 (1982-07-01), Sterling
patent: 4343676 (1982-08-01), Turng
patent: 4454002 (1984-06-01), Hankins
patent: 4509990 (1985-04-01), Vasudeu
patent: 4525223 (1985-06-01), Tsuya et al.
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4702965 (1987-10-01), Fang
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4880493 (1989-11-01), Ashby et al.
Meek et al, Nuclear Instruments and Methods, vol. 94, No. 3 (1971) 435-442.
Memming et al, Surface Science, (1966), 4:109-124.
Finne et al, Electrochem. Soc., (1967) 114:965-970.
van Dijk et al, Jour. Electrochem. Soc., 1970, 553-554.
Huang et al, Appl. Phys. Lett., (1974), 25:753-756.
Gibson et al, Projective Range Statistics: Semiconductors and Related Materials (Halstead Press, 2nd edit, 1975).
Kelly et al, Phys. Stat. Sol., (1975), (a)31:771-780.
IEEE Trans. on Electron. Devices, (1976),D-23:579-583.
Huang et al, IEEE Trans. on Electron. Devices, (1976) 23:579-583.
Vokes et al, Electronics Letters,(1979) 15:627-629.
Griffiths et al, Electronics Letters, (1979) 15:629-630.
Lee et al, Appl. Phys. Lett., (1983) 43:488-489.
Berenz et al, Proc. Eighth Biennial Cornell Conf. on Active Microwave Semiconductor Devices and Circuits, Aug. 12, 1981, pp. 75-85.
Lee et al, J. Appl. Phys., (1983) 54:4035-4037.

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