Measuring and testing – Fluid pressure gauge – Electrical
Reexamination Certificate
2005-11-01
2005-11-01
Oen, William (Department: 2855)
Measuring and testing
Fluid pressure gauge
Electrical
C073S753000
Reexamination Certificate
active
06959608
ABSTRACT:
A new and versatile ultra-miniature pressure sensor comprises a very thin diaphragm of approximately one micron or less, e.g., 0.2 microns. In some embodiments, the diaphragm has a radius of 20 microns and the pressure sensor can detect signals at or near 0.1 Atm with 1% accuracy. The diaphragm is formed by epitaxial growth of silicon or by bonding and etching. A plurality of high sensitivity piezoresistive strain gauges measure strain of the diaphragm. Less than 0.1 microns thick, the piezoresistive strain gauges are embedded in the diaphragm by ion implantation or formed thereon by epitaxial growth. The ability to form ultra-thin piezoresistive layers on very thin diaphragms enables the miniaturization of the pressure sensor as well as any device that employs it.
REFERENCES:
patent: 4588472 (1986-05-01), Shimizu
patent: 6507187 (2003-01-01), Olivas et al.
S. Zappe, E. Obermeier et al., “Piezoresistive pressure sensor based on 3C-SUC-ON-SOI for high temperature and high pressure applications,” retrieved on Apr. 25, 2003. Retrieved from the internet: <URL: http://www-mat.ee.tu-berlin.de/papers/public99/pdf99/zappe1.pdf>.
S Marco et al., “High-performance piezoresistive pressure sensors for biomedical applications using very thin structured membranes,” retrieved on Apr. 25, 2003. Retrieved from the internet: <URL: http://www.wam.umd.edu/˜kone/Ref_5.pdf>.
Bartsch Michael S.
Bly Mark J.
Kenny Thomas W.
Shaughnessy Sara A.
Jenkins Jermaine
Lumen Intellectual Property Services Inc.
Oen William
The Board of Trustees of the Leland Stanford Junior University
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