Ultra-low particle semiconductor method

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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34 78, 134254, 134 30, 134 32, 134 37, B08B 308, B08B 1100

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056349785

ABSTRACT:
A method operates a system for wet processing of semiconductors. The system includes an inlet coupled to a fluid source, and a filter coupled to the inlet. The system also includes a sealed vessel coupled to the filter where the sealed vessel has a lower liquid portion and an upper vapor portion. The system further includes an outlet coupled to the sealed vessel. The outlet is attached to the lower liquid portion. A solvent injector coupled to the sealed vessel is also used. The solvent injector is coupled to the upper vapor portion, and supplies a gaseous mixture including a polar organic compound. The polar organic compound is a non-saturated polar organic vapor. The system also includes a gas source coupled to the sealed vessel. The gas source is coupled to the upper vapor portion, and supplies an inert gas into the upper vapor portion. A device for removing the liquid from the lower liquid portion at substantially a constant liquid level rate is also included.

REFERENCES:
patent: 4633893 (1987-01-01), McConnell et al.
patent: 4750505 (1988-06-01), Inuta et al.
patent: 4778532 (1988-10-01), McConnell et al.
patent: 4871417 (1989-10-01), Nishizawa et al.
patent: 4874014 (1989-10-01), Grant et al.
patent: 4911761 (1990-03-01), McConnell et al.
patent: 4917123 (1990-04-01), McConnell et al.
patent: 4984597 (1991-01-01), McConnell et al.
patent: 4987687 (1991-01-01), Sugimoto
patent: 5082518 (1992-01-01), Molinaro
patent: 5129955 (1992-07-01), Tanaka
patent: 5143103 (1992-09-01), Basso et al.
patent: 5156174 (1992-10-01), Thompson et al.
patent: 5169408 (1992-12-01), Biggerstaff et al.
patent: 5228206 (1993-07-01), Grant et al.
patent: 5286657 (1994-02-01), Bran
patent: 5421905 (1995-06-01), Ueno et al.
D.J. Riley and R.G. Carbonell, "The Deposition of Contaminants from Deionized Water onto Hydrophobic Silicon Wafers", Journal of the IES, pp. 28-34, Nov./Dec. 1991.
N.D. Casper and B. W. Soren, "Semiconductor Yield Enhancement through Particle Control", Emerging Semiconductor Technology, pp. 423-435.
M. Itano, F. W. Kern, Jr., R. W. Rosenberg, M. Miyashita, I. Kawanabe, and T. Ohmi, "Particle Deposition and Removal in Wet Cleaning Processes for ULSI Manufacturing,", IEEE Trans. on Semiconductor Manufacturing, vol. 5, No. 2, pp. 114-120, May 1992.
Y. Yagi, T. Imaoka, Y. Kasama, and T. Ohmi, "Advanced Ultrapure Water Systems with Low Dissolved Oxygen for Native Oxide Free Wafer Processing", IEEE Trans. On Semiconductor Manufacturing, vol. 5, No. 2, pp. 121-127, May 1992.
H. G. Parks J.F. O'Hanlon, and F. Shadman, "Research Accomplishments at the University of Arizona Sematech Center of Excellence for Contamination/Defect Assessment and Control", IEEE Trans. on Semiconductor Manufacturing, vol. 6 No. 2, pp. 134-142, May 1993.
C.S. Ackerman and J.M. Fabia, "Monitoring Supplier Quality at PPM Levels", IEEE Trans. on Semiconductor Manufacturing, vol. 6 No. 2, pp. 189-194, May 1993.
G.D. Moss, J.N. DiBello, K.P. Yanders, and R.F. Orr, "Capillary Drying: Particle-Free Wet-Process Drying?" No date.
T. Ohmi, Ultra Clean Technology Handbook, p. 290, 1993.
J. Marra, "Ultra Clean Marangoni Drying", pp. 269-282 No date.
C. McConnell, "Examining the Effects of Wafer Surface Chemistry on Particle Removal Using Direct-Displacement Isopropyl Alcohol Drying", MicroContamination, Feb. 1991.
P. Burggraaf, "Keeping the `RCA` in Wet Chemistry Cleaning", Semiconductor International, pp. 86-90, Jun. 1994.
M.B. Olesen, "A Comparative Evaluation of the Spin Rinser/Dryer with the IPA Vapor Isodry Technique", Proceedings - Institute of Environmental Sciences, pp. 229-241, 1990.

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