Ultra low dielectric materials based on hybrid system of...

Details Ultra low dielectric materials based on hybrid system of... Ultra low dielectric materials based on hybrid system of...

2006-06-06

2006-06-06

Padgett, Marianne (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S255370, C427S249150, C438S789000, C438S786000

Reexamination Certificate

active

07056560

ABSTRACT:
A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

REFERENCES:
patent: 4845054 (1989-07-01), Mitchener
patent: 5000113 (1991-03-01), Wang et al.
patent: 5003178 (1991-03-01), Livesay
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5628828 (1997-05-01), Kawamura et al.
patent: 5776990 (1998-07-01), Hedrick et al.
patent: 5855681 (1999-01-01), Maydan et al.
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6051321 (2000-04-01), Lee et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6057251 (2000-05-01), Goo et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 6080526 (2000-06-01), Yang et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6169039 (2001-01-01), Lin et al.
patent: 6270900 (2001-08-01), Wakizaka et al.
patent: 6271146 (2001-08-01), Ross
patent: 6303047 (2001-10-01), Aronowitz et al.
patent: 6312793 (2001-11-01), Grill et al.
patent: 6316063 (2001-11-01), Andideh et al.
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6352945 (2002-03-01), Matsuki et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6407399 (2002-06-01), Livesay
patent: 6410463 (2002-06-01), Matsuki
patent: 6432846 (2002-08-01), Matsuki
patent: 6437443 (2002-08-01), Grill et al.
patent: 6441491 (2002-08-01), Grill et al.
patent: 6444136 (2002-09-01), Liu et al.
patent: 6455445 (2002-09-01), Matsuki
patent: 6479110 (2002-11-01), Grill et al.
patent: 6486082 (2002-11-01), Cho et al.
patent: 6500773 (2002-12-01), Gaillard et al.
patent: 6509259 (2003-01-01), Wang et al.
patent: 6514880 (2003-02-01), Matsuki et al.
patent: 6524874 (2003-02-01), Alwan
patent: 6541367 (2003-04-01), Mandal
patent: 6548899 (2003-04-01), Ross
patent: 6582777 (2003-06-01), Ross et al.
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6583071 (2003-06-01), Weldman et al.
patent: 6593655 (2003-07-01), Loboda et al.
patent: 6596627 (2003-07-01), Mandal
patent: 6605549 (2003-08-01), Leu et al.
patent: 6677253 (2004-01-01), Andideh et al.
patent: 6709715 (2004-03-01), Lang et al.
patent: 6797643 (2004-09-01), Rocha-Alvarez et al.
patent: 6846515 (2005-01-01), Vrtis et al.
patent: 2002/0037442 (2002-03-01), Grill et al.
patent: 2002/0098714 (2002-07-01), Grill et al.
patent: 2002/0142579 (2002-10-01), Vincent et al.
patent: 2002/0142585 (2002-10-01), Mandal
patent: 2002/0160626 (2002-10-01), Matsuki et al.
patent: 2002/0180051 (2002-12-01), Grill et al.
patent: 2002/0197849 (2002-12-01), Mandal
patent: 2003/0008998 (2003-01-01), Aoi
patent: 2003/0017718 (2003-01-01), Aoi
patent: 2003/0040195 (2003-02-01), Chang et al.
patent: 2003/0104689 (2003-06-01), Shioya et al.
patent: 2003/0104708 (2003-06-01), Cho et al.
patent: 2003/0109136 (2003-06-01), Shioya et al.
patent: 2003/0111712 (2003-06-01), Andideh
patent: 2003/0116421 (2003-06-01), Xu et al.
patent: 2003/0176030 (2003-09-01), Tsuji et al.
patent: 2003/0198742 (2003-10-01), Vrtis et al.
patent: 2003/0224593 (2003-12-01), Wong
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0038514 (2004-02-01), Hyodo et al.
patent: 2004/0039219 (2004-02-01), Chen et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0175501 (2004-09-01), Lukas et al.
patent: 2004/0175957 (2004-09-01), Lukas et al.
patent: 2004/0197474 (2004-10-01), Vrtis et al.
patent: 2005/0153073 (2005-07-01), Zheng et al.
patent: 2005/0161060 (2005-07-01), Johnson et al.
patent: 2005/0227502 (2005-10-01), Schmitt et al.
patent: 2005/0230834 (2005-10-01), Schmitt et al.
patent: 0 935 283 (1999-08-01), None
patent: 1 354 980 (2003-10-01), None
patent: WO 97/00535 (1997-01-01), None
patent: WO 99/21706 (1999-05-01), None
patent: WO 01/29052 (2001-04-01), None
patent: WO 01/61737 (2001-08-01), None
patent: WO 03/095702 (2003-11-01), None
PCT International Search Report for PCT/US 03/14272 dated Jan. 21, 2004.
Paul Kallender, “Toshiba, Fujitsu Report 100-Nanometer Process Gains”, EE Times, Nov. 8, 2001. http://www.eetimes.com/story/OEG20011106S0034.
PCT International Search Report and Written Opinion for PCT/US2005/003425, dated May 6, 2005.
PCT Written Opinion; PCT/US03/14272, May 8, 2003.

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