Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-06-13
2009-10-06
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S433000, C257S460000
Reexamination Certificate
active
07598582
ABSTRACT:
A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P+diffusion region may be formed within the cap layer, the N-doped interface layer and at least a portion of the absorption layer, and at least one contact may be formed on and coupled to the P+diffusion region.
REFERENCES:
patent: 4990989 (1991-02-01), ElHamamsy et al.
patent: 6573581 (2003-06-01), Sugg et al.
patent: 7288825 (2007-10-01), Rafferty et al.
Boisvert Joseph Charles
Isshiki Takahiro D.
Sudharsanan Rengarajan
Halperin Brett L.
Pizarro Marcos D.
Rao Steven H
The Boeing Company
Yee & Associates P.C.
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