Ultra-low current band-gap reference

Details Ultra-low current band-gap reference Ultra-low current band-gap reference

2005-06-28

2005-06-28

Zweizig, Jeffrey (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S569000

Reexamination Certificate

active

06911862

ABSTRACT:
A band gap voltage reference for an NMOS memory device includes a plurality of horizontal gate bipolar junction transistors that show improved gain at low collector currents. The horizontal gate bipolar transistors include an emitter formed by the NMOS memory device n+ source region, a base formed by the NMOS memory device p+ channel region, and a collector formed by the NMOS memory device n+ drain region, in which the base/channel region is less than 0.4 μm in width and advantageously may be fabricated by standard flash memory manufacturing processes.

REFERENCES:
patent: 4339707 (1982-07-01), Gorecki
patent: 4849933 (1989-07-01), Allen
patent: 5570008 (1996-10-01), Goetz
patent: 6002245 (1999-12-01), Sauer
patent: 6009022 (1999-12-01), Lee
patent: 6150871 (2000-11-01), Yee
patent: 6157245 (2000-12-01), Rincon-Mora
patent: 6255807 (2001-07-01), Doorenbos
patent: 6294902 (2001-09-01), Moreland et al.
patent: 6507179 (2003-01-01), Jun
patent: 6570437 (2003-05-01), Park
patent: 2003/0117120 (2003-06-01), Amazeen
patent: 2003/0137342 (2003-07-01), Opris
patent: 2003/0202380 (2003-10-01), Marotta

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