Ultra low-cost solid-state memory

Details Ultra low-cost solid-state memory Ultra low-cost solid-state memory

2007-10-15

2008-12-09

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

Ferroelectric

C365S063000, C365S068000, C365S145000, C257S296000, C257S300000, C257S307000

Reexamination Certificate

active

07463502

ABSTRACT:
A three-dimensional solid-state memory is formed from a plurality of bit lines, a plurality of layers, a plurality of tree structures and a plurality of plate lines. Bit lines extend in a first direction in a first plane. Each layer includes an array of memory cells, such as ferroelectric or hysteretic-resistor memory cells. Each tree structure corresponds to a bit line, has a trunk portion and at least one branch portion. The trunk portion of each tree structure extends from a corresponding bit line, and each tree structure corresponds to a plurality of layers. Each branch portion corresponds to at least one layer and extends from the trunk portion of a tree structure. Plate lines correspond to at least one layer and overlap the branch portion of each tree structure in at least one row of tree structures at a plurality of intersection regions.

REFERENCES:
patent: 6754124 (2004-06-01), Seyyedy et al.
patent: 6819581 (2004-11-01), Ito

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