Ultra high-speed Si/SiGe modulation-doped field effect...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C438S458000, C438S460000, C438S478000

Reexamination Certificate

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07098057

ABSTRACT:
A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.

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patent: WO 02/47168 (2002-06-01), None
Huang L. J. et al. “SiGe-on-Insulator Prepared by Wafer Bonding and Layer Transfer for High-Performance Field-Effect Transistors.”Applied Physics LettersXP012028719 vol. 78, No. 9 (2001) : 1267-1269.
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Marco Zeuner. “Technologiekonzepte für sub-100 nm SiGe-Hetero-Feldeffekttransistoren zur Anwendung im Hochfrequenzbereich—Dissertation.” XP002324359 (2003) : 69-85.
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