Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-02-15
2005-02-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S018000, C257S019000, C257SE29193, C257S798000
Reexamination Certificate
active
06855963
ABSTRACT:
A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.
REFERENCES:
patent: 6737670 (2004-05-01), Cheng et al.
Chu Jack O.
Ouyang Qiqing C.
International Business Machines - Corporation
Nelms David
Scully Scott Murphy & Presser
Tran Mai-Huong
Trepp, Esq. Robert M.
LandOfFree
Ultra high-speed Si/SiGe modulation-doped field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultra high-speed Si/SiGe modulation-doped field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra high-speed Si/SiGe modulation-doped field effect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3443913