Ultra-high-speed photoconductive devices using semi-insulating l

Details Ultra-high-speed photoconductive devices using semi-insulating l Ultra-high-speed photoconductive devices using semi-insulating l

1989-02-17

1992-12-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 22, 437 25, 437126, 437133, H01L 3138, H01L 21265

Patent

active

051680696

ABSTRACT:
An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

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