Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1984-04-26
1986-12-23
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330295, 330307, H03F 368
Patent
active
046314920
ABSTRACT:
The invention provides a high gain ultra high frequency amplifier with high output power and low phase shift. This amplifier, whose organization is arborescent, comprises a plurality of series amplification stages (1st to 5th), each stage comprising a plurality of elementary cells. Each cell has only one input but at least two outputs. A cell is, for example, a field effect transistor, with input at the gate and outputs at two drains. The input of the first transistor forms the input of the amplifier. A metalization which joins together all the outputs of the transistors of the last stage forms the output of the amplifier. The transistors are input and output matched by means of microstrip lines, capacities and inductances. The monolithic implantation of this amplifier may, among other things, be provided concentrically about the input transistor or linearly with the transistors of the last stage on one line and those of all the other stages on another line.
REFERENCES:
patent: 3652947 (1972-03-01), Hollingsworth
patent: 4141023 (1979-02-01), Yamada
Pavlidis et al, "A New, Specifically Monolithic Approach to Microwave Power Amplifiers", IEEE 1983 Microwave and Millimeter-Wave Monolithic Circuits Symposium, Digest of Papers, May 31-Jun. 1, 1983, pp. 54-58.
Pengelly, et al, "A Comparison Between Actively and Passively Matched S-Band GaAs Monolithic Fet Amplifiers", Conferences: 1981 IEEE MTT-S International Microwave Symposium Digest, Los Angeles, CA, U.S.A., 15-19 Jun. 1981, pp. 367-369.
RCA Review, vol. 41, No. 3 (Sep. 1980), B. Dornan et al., "A 4-Ghz GaAs FET Power Amplifier: An Advanced Transmitter for Satellite Down-Link Communication Systems," pp. 472-503.
Electronique Industrielle, No. 45 (Jan. 1983), J. Josefowicz, "Amplificateur de Grande Puissance a l'Etat Solide 3 GHz," pp. 49-50.
IEEE Transactions on Microwave Theory & Techniques, vol. MTT-29, No. 6 (Jun. 1981), R. A. Pucel, "Design Considerations for Monolithic Microwave Circuits," pp. 513-534.
L'Onde Electrique, vol. 61, No. 11 (Nov. 1981), H. F. Cooke, "Les Transistors a Effet de Champ Micro-Ondes," pp. 17-23.
Magarshack John
Pavlidis Dimitri
"Thomson-CSF"
Mullins James B.
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