Ultra-high frequency oscillator with dielectric resonator of the

Details Ultra-high frequency oscillator with dielectric resonator of the Ultra-high frequency oscillator with dielectric resonator of the

1982-03-25

1984-11-06

Laroche, Eugene R.

Oscillators

With distributed parameter resonator

Parallel wire type

331117D, 331117FE, H03B 518

Patent

active

044814860

ABSTRACT:
An ultra-high frequency oscillator having a very high thermal stability using a transistor coupled by a microstrip-type transmission line to a dielectric resonator with a very low temperature coefficient. It incorporates a field effect or bipolar transistor and an insulating substrate metallized or formed of metal on one face forming the ground plane. The latter projects over the substrate at a point close to two microstrip lines deposited on the face of the substrate opposite to the ground plane, the transistor being welded to said projecting point of the ground plane and to the microstrip lines. The assembly forms a compact hybrid circuit.

REFERENCES:
patent: 4149127 (1979-04-01), Murakami et al.
1979, IEEE MTT-S International Microwave Symposium Digest, Saito et al., "A 6 GHz Highly Stabilized GaSa FET Oscillator Using a Dielectric Resonator", pp. 197-199.
1979, IEEE MTT-S International Microwave Symposium Digest, Mishima et al., "FM Noise of Transmission-Type Injection-Locked GaAs FET Osciallators and Amplifiers", pp. 194-196.
NEC Research & Development, No. 45, Apr. 1977, Abe et al., "A High-power Microwave GaAs FET Oscillator", pp. 58-65.
EDN, vol. 13, No. 2, Feb. 1968, "Anatomy of the LID", pp. 70-73.

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