Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is selenium or tellurium in elemental form
Reexamination Certificate
2005-12-27
2005-12-27
Wilson, Christian D. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is selenium or tellurium in elemental form
C438S102000
Reexamination Certificate
active
06979838
ABSTRACT:
An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.
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Ashton Gary R.
Bicknell-Tassius Robert N.
Gibson Gary A.
Hewlett--Packard Development Company, L.P.
Wilson Christian D.
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