Static information storage and retrieval – Interconnection arrangements
Patent
1995-11-08
1996-12-31
Nelms, David C.
Static information storage and retrieval
Interconnection arrangements
365104, 365 51, G11C 1300
Patent
active
055900682
ABSTRACT:
An alternate metal ground (AMG) read only memory (ROM) includes an array of ROM data storage cells that are divided into segments. Each segment includes a plurality (typically 2.sup.x, e.g. 32 or 64) of word lines, a pair of segment select transistors for minimizing bit line capacitance when reading, and a pair of inner select transistors on each part of a segment to insure the connection between the connected diffusion but line and the intermediate non-connected diffusion bit line. That is, diffusion bit lines N-1, and N+1 are connected to metal bit lines via the segment select transistors. The diffusion bit lines between bit lines N-1, N and N+1 are not connected to metal bit lines. These non-connected intermediate bit lines are connected to ground via the inner or outer select transistors.
REFERENCES:
patent: 5111428 (1992-05-01), Liang et al.
patent: 5151375 (1992-09-01), Kazerounian et al.
patent: 5204835 (1993-04-01), Eitan
patent: 5241497 (1993-08-01), Komarek
Mikiro Okada et al., "16Mb Rom Design Using Bank Select Architecture", Integrated Circuits Group, pp. 85-86.
Okada, M. et al., "16Mb Rom Design Using Bank Select Architecture", Symposium on VLSI Circuits--Digest of Technical Papers 1988, Tokyo, Japan, pp. 85-86.
Le Vu A.
National Semiconductor Corporation
Nelms David C.
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