Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2008-04-22
2008-04-22
Shosho, Callie (Department: 1794)
Stock material or miscellaneous articles
Composite
Of silicon containing
C257S656000, C428S336000, C428S428000, C428S448000, C427S585000
Reexamination Certificate
active
10488902
ABSTRACT:
A combination of a thin-film μc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of μc-Si deposited the bottom metal layer; an i-layer of μc-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of μc-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
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Langman Jonathan
Lathrop & Gage LC
Shosho Callie
Wang Qi
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