Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2008-04-22
2008-04-22
Shosho, Callie (Department: 1794)
Stock material or miscellaneous articles
Composite
Of silicon containing
C257S656000, C428S336000, C428S428000, C428S448000, C427S585000
Reexamination Certificate
active
07361406
ABSTRACT:
A combination of a thin-film μc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of μc-Si deposited the bottom metal layer; an i-layer of μc-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of μc-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
REFERENCES:
patent: 3818365 (1974-06-01), Hanson
patent: 3976361 (1976-08-01), Fraas et al.
patent: 4231820 (1980-11-01), Henry
patent: 4307935 (1981-12-01), Monnier
patent: 4412900 (1983-11-01), Tanaka et al.
patent: 4528082 (1985-07-01), Moustakas et al.
patent: 4975752 (1990-12-01), Kashima et al.
patent: 5155565 (1992-10-01), Wenz et al.
patent: 5216263 (1993-06-01), Paoli
patent: 5317170 (1994-05-01), Paoli
patent: 5336924 (1994-08-01), Quint
patent: 5354967 (1994-10-01), Barzilai et al.
patent: 5627386 (1997-05-01), Harvey et al.
patent: 5828683 (1998-10-01), Freitas
patent: 6051874 (2000-04-01), Masuda
patent: 6229153 (2001-05-01), Botez et al.
Langman Jonathan
Lathrop & Gage LC
Shosho Callie
Wang Qi
LandOfFree
Ultra-high current density thin-film Si diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultra-high current density thin-film Si diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-high current density thin-film Si diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2767741