Ultra-fast detectors using doped nanocrystal insulators

Details Ultra-fast detectors using doped nanocrystal insulators Ultra-fast detectors using doped nanocrystal insulators

1994-08-11

1995-08-29

Willis, Davis L.

Radiant energy

Invisible radiant energy responsive electric signalling

With or including a luminophor

257 17, G01T 120, H01L 3112

Patent

active

054462860

ABSTRACT:
An efficient and ultrafast sensor for X-ray and UV radiation based on doped nanocrystals. These doped nanocrystals consist preferably of impurity-activator doped wide band gap II-VI semiconductors. They yield high efficiency and short recombination time radiation-sensitive phosphors which in response to radiation emit visible light easily detected by conventional sensors such as Si sensors. The combination of pulsed UV/X-ray sources with efficient and ultrafast sensors will yield sensors with increased signal to noise ratio. In a preferred embodiment, thin films of doped nanocrystals are used for generating visible radiation, which can be imaged with a conventional Si-based camera. Other applications also include the use of doped nanocrystals of piezoelectric materials to sense pressure, of pyroelectric materials to sense heat, and of ferroelectric materials to sense electric fields.

REFERENCES:
patent: 5293050 (1994-03-01), Chapple-Sokol et al.

Affiliated with

Also associated with

Rating

Ultra-fast detectors using doped nanocrystal insulators does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ultra-fast detectors using doped nanocrystal insulators, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra-fast detectors using doped nanocrystal insulators will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1821309