Amplifiers – With semiconductor amplifying device – Including signal feedback means
Reexamination Certificate
2006-05-24
2008-03-04
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including signal feedback means
C330S075000
Reexamination Certificate
active
07339436
ABSTRACT:
This invention relates to a low noise amplifier, used in radio frequency integrated circuit design, especially low noise amplifiers for ultra broad-band wireless communication, comprising at least a transistor of the core circuit of a low noise amplifier structure, a transformer that is implemented on the chip, in order to form a dual feedback amplifier, that is, an amplifier structure comprising an inductive feedback and a capacitive feedback, wherein the capacitive feedback is used for the low and medium frequency range, while the inductive feedback is used for the high frequency range. By assembling an amplifier circuit with these two feedback paths, it is possible to provide a broadband and good impedance matching at the signal input end of the circuit. The low noise amplifier circuit structure of the present invention is able to provide optimal conditions for broadband input impedance matching and broadband noise optimum; besides significantly increasing the gain and gain flatness, there are also huge improvements to the noise performance and the cost-down on fabrication, and the energy consumption can also be maintained at a very low level.
REFERENCES:
patent: 6026286 (2000-02-01), Long
patent: 6313706 (2001-11-01), Kakuta et al.
patent: 6369655 (2002-04-01), Nishida et al.
patent: 6441689 (2002-08-01), Joseph
patent: 6566963 (2003-05-01), Yan et al.
patent: 6642794 (2003-11-01), Mulder et al.
patent: 6809594 (2004-10-01), Sutardja
patent: 7199652 (2007-04-01), Morimoto et al.
patent: 2004/0130398 (2004-07-01), Franca-Neto
M. P. Heijden, L. C. N Vreede, 3. N. Burgharz, “On the design of unilateral dualloop feedback low-noise amplifiers with simultaneous noise impedance and 1W3 match” (IEEE J. Solide-State Circuits, vol. 39, No. 10 Oct. 2004, pp. 1727-1736).
D.K Shaeffer and I. H. Lee, “A 1 .5V, 1.5GHz CMOS low noise amplifier” (IEEE J. Solid-State Circuits, vol. 32, No. 5, May 1997, p. 745 to 759) (enclosed).
A. Bevilacqua and A. M. Niknej ad, “An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6 GHz Wireless Receivers” (IEEE J. Solid-State Circuits, vol. 39, No. 12, p. 2259 to 2268, Dec. 2004)(enclosed).
“A 3 to 10 GHz Low Noise Amplifier with Wideband LC-Ladder Matching Network” (IEEE J. Solid-State Circuits, vol. 39, No. 12, pp. 2269 to 2277, Dec. 2004) by A. Ismail and A. A. Abidi (enclosed).
Robert Hu and M. S. C. Yang, “Investigation of Different Input-Matching Mechanisms used in Wide-Band LNA Design” (International Journal of Infrared and Millimeter Waves, vol. 26, No. 2, pp. 221 to 245, Feb. 2005)(enclosed).
D. J. Cassan and J. R. Long, “A 1-V transformer-feedback low noise amplifier for 5 GHz wireless LAN in 0.18˜tm CMOS” (IEEE J. Solid-State Circuits, vol. 38, No. 3, Mar. 2003 pp. 427 to 435)(enclosed).
Fu Chang-Tsung
Kuo Chien-Nan
Bucknam and Archer
Choe Henry
National Chiao Tung University
LandOfFree
Ultra broad-band low noise amplifier utilizing dual feedback... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ultra broad-band low noise amplifier utilizing dual feedback..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ultra broad-band low noise amplifier utilizing dual feedback... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3960660