Type silicon material with enhanced surface mobility

Details Type silicon material with enhanced surface mobility Type silicon material with enhanced surface mobility

1992-11-20

1997-05-27

Kunemund, Robert

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

437 29, 437 83, 437173, 438953, 438402, 438403, 438423, 438798, H01L 21322

Patent

active

056331746

ABSTRACT:
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.

REFERENCES:
patent: 4155779 (1979-05-01), Auston et al.
patent: 4981815 (1991-01-01), Kakoschke
Tung, "Application of Rapid Isothermal Annealing to Shallow P-N Junctions via BF.sub.2 Implants", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 132, No. 4, pp. 914-917, Apr. 1985.
Jiamming Li, "A New Semiconductor Substrate Formation by Hydrogen Ion Implantation into Silicon", Chinese Journal of Semiconductors, vol. 9, No. 4, pp. 459-462, 1988.

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